Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

FEATUREs:
• High Collector–Emitter Sustaining Voltage: VCEO(sus) = 160V
• High DC Current Gain: hFE = 35 Typ @ IC = 8A
• Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A