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NSVF6001SB6T1G(2019) データシート - ON Semiconductor

NSVF6001SB6 image

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NSVF6001SB6T1G

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ON Semiconductor ON-Semiconductor

RF Transistor 12 V, 100 mA, fT = 6.7 GHz, NPN Single

   This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC−Q101 qualified and PPAP capable for automotive applications.


FEATUREs
• Input Voltage Operation: up to 32 V
• High Gain: |S21e|2 = 11 dB typ (f = 1 GHz)
• High Cut−off Frequency: fT = 6.7 GHz Typ
• Miniature and Thin 6 Pin Package
• High Collector Dissipation (800 mW)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

Typical Applications
• Low Noise Amplifier for FM Radio
• Low Noise Amplifier for TV


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