Description
The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATUREs
• Low on-state resistance
⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified