メーカー
NEC => Renesas Technology
DESCRIPTION
NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators
NECslow profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER:
P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Micro Devices => Onsemi
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.