メーカー
![CEL](/logo/CEL.png)
California Eastern Laboratories.
![CEL](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
The NE72218 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance, reliability and uniformity. The NE72218 is housed in a 4 pin super mini mold package, making it ideal for high density design.
FEATURES
• HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz
• LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz
• GATE LENGTH: LG = 0.8 µm (recessed gate)
• GATE WIDTH: WG = 400 µm
• 4 PIN SUPER MINI MOLD: (SOT-343)
• TAPE & REEL PACKAGING
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET
NEC => Renesas Technology
C-BAND POWER GaAs MESFET
NEC => Renesas Technology
HiRel C-Band GaAs Power-MESFET
Infineon Technologies
C-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
NEC => Renesas Technology
GENERAL PURPOSE L TO X-BAND GaAs MESFET
NEC => Renesas Technology
HiRel X-Band GaAs Power-MESFET
Infineon Technologies
HiRel X-Band GaAs Power-MESFET
Infineon Technologies
GENERAL PURPOSE L TO X-BAND GaAs MESFET
NEC => Renesas Technology
HiRel X-Band GaAs Power-MESFET
Infineon Technologies