DESCRIPTION
The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.  The NE68033 / 2SC3585 features excellent power gain with very low-noise figures.  The NE68033 / 2SC3585 employs direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique which provides excellent noise figures at high current values.  This allows excellent associated gain and very wide dynamic range.
FEATURES
• NF 1.8 dB TYP. @f = 2.0 GHz
• Ga 9 dB TYP. @f = 2.0 GHz