DESCRIPTION
The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.
The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.

FEATURES
• Low noise : NV = −114 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 15 kΩ
• Low input capacitance : Ciss = 1.5 pF TYP. @VDD = 2.0 V, RL = 15 kΩ
• Low consumption current : IDD = 85 μATYP. @VDD = 2.0 V, RL = 15 kΩ
• High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
• Built-in the capacitor for RF noise immunity
• High ESD voltage

APPLICATIONS
• Microphone, Sensor etc.