NE52118 データシート - NEC => Renesas Technology
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NE52118
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NEC => Renesas Technology
FEATURES
• HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• 4 PIN SUPER MINI MOLD PACKAGE
• GROUNDED EMITTER TRANSISTOR
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GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
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