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N08M1618L1A データシート - AMI Semiconductor

N08M1618L1A image

部品番号
N08M1618L1A

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11 Pages

File Size
189.2 kB

メーカー
AMI
AMI Semiconductor AMI

Overview
The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users.


FEATUREs
• Dual voltage for Optimum Performance:
    Vccq - 2.3 to 3.6 Volts
    Vcc - 1.4 to 2.2 Volts
• Very low standby current
    0.5µA at 1.8V and 37 deg C
• Very low operating current
    1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
    0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.2V
• Special Processing to reduce Soft Error Rate (SER)
• Automatic power down to standby mode

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部品番号
コンポーネント説明
PDF
メーカー
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Unspecified
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
ON Semiconductor
512K x 16 8Mb Asynchronous SRAM
Giga Semiconductor
512K x 16 8Mb Asynchronous SRAM
Giga Semiconductor
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
Unspecified

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