FLASH
• Word mode only
• VCCf=VCCQ=2.7V~3.6V for read, erase and program
   operation
• VPP=12V for fast production programming
• Low power consumption
   - 9mA typical active read current, f=5MHz
   - 18mA typical program current (VPP=1.65~3.6V)
   - 21mA typical erase current (VPP=1.65~3.6V)
   - 7uA typical standby current under power saving mode
• Sector architecture
   - Sector structure : 4Kword x 2 (boot sectors), 4Kword
   x 6 (parameter sectors), 32Kword x 31 (main sectors)
   - Top/Bottom Boot
• Auto Erase and Auto Program
   - Automatically program and verify data at specified
   address
   - Auto sector erase at specified sector
• Automatic Suspend Enhance
   - Word write suspend to read
   - Sector erase suspend to word write
   - Sector erase suspend to read register report
• Automatic sector erase, word write and sector lock/
   unlock configuration
• 100,000 minimum erase/program cycles
• Boot Sector Architecture
   - T = Top Boot Sector
   - B = Bottom Boot Sector
• Status Register feature for detection of program or
   erase cycle completion
• Data protection performance
   - Sectors to be locked/unlocked
• Common Flash Interface (CFI)
• 128-bit Protection Register
   - 64-bit Unique Device Identifier
   - 64-bit User-Programmable
• Latch-up protected to 100mA from -1V to VCC+1V

SRAM
• MX69F1602C3T/B: 128K wordx16 Bit
• MX69F1604C3T/B: 256K wordx16 Bit
• 70mA maximum active current
• 1uA typical standby current
• Data retention supply voltage: 2.0V~3.6V
• Byte data control : LBs(Q0 to Q7) and UBs(Q8 to Q15)