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MX29LV033M データシート - Integrated Circuit Systems

MX29LV033M image

部品番号
MX29LV033M

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65 Pages

File Size
374.1 kB

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ICST
Integrated Circuit Systems ICST

GENERAL DESCRIPTION
The MX29LV033M is a 32-mega bit Flash memory organized as 4M bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV033M is packaged in 40-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.


FEATURES
GENERAL FEATURES
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Configuration
   - 4,194,304 x 8 byte structure
• Sector structure
   - 64KB x 64
• Sector Protection/Chip Unprotect
   - Provides sector group protect function to prevent
      program or erase operation in the protected sector
      group
   - Provides chip unprotect function to allow code
      changes
   - Provides temporary sector group unprotect function
   for code changes in previously protected sector groups
• Secured Silicon Sector
   - Provides a 256-byte OTP area for permanent, secure
      identification
   - Can be programmed and locked at factory or by customer
• Latch-up protected to 250mA from -1V to VCC + 1V
• Low VCC write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
   - Pin-out and software compatible to single power supply Flash

PERFORMANCE
• High Performance
   - Fast access time: 70R/90ns
   - Page read time: 25ns
   - Sector erase time: 0.5s (typ.)
   - Effective write buffer byte programming time: 11us
   - 8 byte page read buffer
   - 32 byte write buffer: reduces programming time for
      multiple-byte updates
• Low Power Consumption
   - Active read current: 18mA(typ.)
   - Active write current: 50mA(typ.)
   - Standby current: 20uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-year data retention

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