The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

FEATUREs
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175°C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction

APPLICATIONs
• Switching Power Supply
• Power Switching Circuits
• General Purpose