General Description
   NAND Flash technology provides a cost-effective solution for applications requiring high-density, solid-state storage. The MT29F2GxxAxD is a 2Gb NAND Flash memory device. Micron NAND Flash devices include standard NAND Flash features as well as new features designed to enhance system-level performance.

FEATUREs
• Open NAND Flash Interface (ONFI) 1.0-compliant
• Single-level cell (SLC) technology
• Organization
   – Page size:
• x8: 2,112 bytes (2,048 + 64 bytes)
• x16: 1,056 words (1,024 + 32 words)
   – Block size: 64 pages (128K + 4K bytes)
   – Device size: 2Gb: 2,048 blocks
• READ performance
   – Random READ: 25µs
   – Sequential READ: 25ns (3.3V)
   – Sequential READ: 35ns (1.8V)
• WRITE performance
   – PROGRAM PAGE: 220µs (TYP, 3.3V)
   – PROGRAM PAGE: 300µs (TYP, 1.8V)
   – BLOCK ERASE: 500µs (TYP)
• Data retention: 10 years
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
   valid with ECC when shipped from factory1
• Industry-standard basic NAND Flash command set
• Advanced command set:
   – PROGRAM PAGE CACHE MODE
   – PAGE READ CACHE MODE
   – One-time programmable (OTP) commands
   – BLOCK LOCK (1.8V only)
   – PROGRAMMABLE DRIVE STRENGTH
   – READ UNIQUE ID
• Operation status byte provides a software method of
   detecting:
   – Operation completion
   – Pass/fail condition
   – Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
   method of detecting operation completion
• WP# signal: write protect entire device
• RESET required as first command after power-up
• INTERNAL DATA MOVE operations supported
• Alternate method of device initialization
   (Nand_Init) after power up4 (Contact Factory)