General Description
NAND Flash technology provides a cost-effective solution for applications requiring high-density, solid-state storage. The MT29F2GxxAxD is a 2Gb NAND Flash memory device. Micron NAND Flash devices include standard NAND Flash features as well as new features designed to enhance system-level performance.
FEATUREs
• Open NAND Flash Interface (ONFI) 1.0-compliant
• Single-level cell (SLC) technology
• Organization
– Page size:
• x8: 2,112 bytes (2,048 + 64 bytes)
• x16: 1,056 words (1,024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 2Gb: 2,048 blocks
• READ performance
– Random READ: 25µs
– Sequential READ: 25ns (3.3V)
– Sequential READ: 35ns (1.8V)
• WRITE performance
– PROGRAM PAGE: 220µs (TYP, 3.3V)
– PROGRAM PAGE: 300µs (TYP, 1.8V)
– BLOCK ERASE: 500µs (TYP)
• Data retention: 10 years
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid with ECC when shipped from factory1
• Industry-standard basic NAND Flash command set
• Advanced command set:
– PROGRAM PAGE CACHE MODE
– PAGE READ CACHE MODE
– One-time programmable (OTP) commands
– BLOCK LOCK (1.8V only)
– PROGRAMMABLE DRIVE STRENGTH
– READ UNIQUE ID
• Operation status byte provides a software method of
detecting:
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: write protect entire device
• RESET required as first command after power-up
• INTERNAL DATA MOVE operations supported
• Alternate method of device initialization
(Nand_Init) after power up4 (Contact Factory)