DESCRIPTION:
• N-Channel enhancement mode high density MOSFET die
• Passivation: oxynitride, 4um
• Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
• Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach

FEATURES:
• Low On-state resistance
• Avalanche and Surge Rated
• High Freq. Switching
• Ultra Low Leakage Current
• UIS rated
• Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix