DESCRIPTION:
The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz.

FEATUREs
• 500 Watts @ 250 µSec Pulse Width, 10% Duty Cycle
• Refractory Gold Metallization
• Emitter Ballasting And Low Resistance For Reliability and Ruggedness
• Infinite VSWR Capability At Specified Operating Conditions
• Input Matched, Common Base Configuration
• Balanced Configuration