DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.

FEATUREs
• 30 MHz
• 28 VOLTS
• IMD = -28 dB
• POUT = 30 WATTS
• GP = 18 dB MINIMUM
• COMMON EMITTER CONFIGURATION