The RF Small Signal Line
Gallium Arsenide PHEMT
Pseudomorphic High Electron Mobility Transistor

Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

• Performance Specifications at 3.5 V, 850 MHz:
   Output Power = 31 dBm Min
   Power Gain = 11 dB Typ
   Efficiency = 70% Min
• Guaranteed Ruggedness at Load VSWR = 20:1
• New Plastic Surface Mount Package
• Available in Tape and Reel Packaging Options:
   T1 suffix = 1,000 Units per Reel
• Device Marking = 9822