RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts Output Power ó 30 Watts PEP
      Power Gain - 20 dB
      Efficiency - 41% (Two Tones)
      IMD  - - 31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power

Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• Dual- Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.
• 200C Capable Plastic Package
• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.
• TO- 272- 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
• TO- 270- 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.