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MPSU06 データシート - New Jersey Semiconductor

MPS-U05 image

部品番号
MPSU06

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NJSEMI
New Jersey Semiconductor NJSEMI

NPN SILICON ANNULAR AMPLIFIER TRANSISTORS

. . . designed for general-purpose, high-voltage amplifier anddriver applications.

• High Collector-Emitter Breakdown Voltage-
   BVCEO = 60 Vdc(Min) @ Ic = 1.0 mAdc - MPS-U05
                    80 Vdc(Min) @ lc = 1.0 mAdc - MPS-U06
• High Power Dissipation - PQ = 10 W @ TC = 25°C
• Complements to PNP MPS-U55 and MPS-U56

 

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NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
PNP SILICON ANNULAR AMPLIFIER TRANSISTORS
Motorola => Freescale
NPN Silicon Annular Transistors
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
Motorola => Freescale
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
PNP silicon annular amplifier transistors
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
Motorola => Freescale
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
Npn Silicon Annular Transistors
New Jersey Semiconductor

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