Silicon Hot−Carrier Diodes
Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

FEATUREs
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.0 pF @ VR = 20 V
• High Reverse Voltage − to 70 V
• Low Reverse Leakage − 200 nA (Max)
• Pb−Free Packages are Available