NPN Silicon Power Transistor
1 kV SWITCHMODE Series
These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications.
FEATUREs:
• Collector-Emitter Voltage — VCEV = 1000 Vdc
• Fast Turn-Off Times
80 ns Inductive Fall Time — 100°C (Typ)
120 ns Inductive Crossover Time — 100°C (Typ)
800 ns Inductive Storage Time — 100°C (Typ)
• 100°C Performance Specified for:
Reverse-Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
• Extended FBSOA Rating Using Ultra-fast Rectifiers
• Extremely High RBSOA Capability
Typical Applications:
• Switching Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
• Deflection Circuits