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MJD31C データシート - Nexperia B.V. All rights reserved

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部品番号
MJD31C

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11 Pages

File Size
221.8 kB

メーカー
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

PNP complement: MJD32C


FEATUREs and benefits
• High thermal power dissipation capability
• High energy efficiency due to less heat generation
• Electrically similar to popular MJD31 series
• Low collector emitter saturation voltage
• Fast switching speeds


APPLICATIONs
• Power management
• Load switch
• Linear mode voltage regulator
• Constant current drive backlighting application
• Motor drive
• Relay replacement


部品番号
コンポーネント説明
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100 V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 3 A NPN high power bipolar transistor ( Rev : 2020 )
Nexperia B.V. All rights reserved
100 V, 3 A NPN high power bipolar transistor
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100 V, 3 A PNP high power bipolar transistor
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100 V, 6 A NPN high power bipolar transistor
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100 V, 6 A NPN high power bipolar transistor
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100 V, 6 A PNP high power bipolar transistor
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100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved

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