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MJD253T4G(2016) データシート - ON Semiconductor

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MJD253T4G

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Complementary Silicon Plastic Power Transistors
DPAK−3 for Surface Mount Applications

Designed for low voltage, low−power, high−gain audio amplifier applications.


FEATUREs
• High DC Current Gain
• Lead Formed for Surface Mount Applications in Plastic Sleeves
   (No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant


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