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MJD210(2013) データシート - ON Semiconductor

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MJD210

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Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
   
Designed for low voltage, low−power, high−gain audio amplifier applications.
   
Features
• High DC Current Gain
• Lead Formed for Surface Mount Applications in Plastic Sleeves
    (No Suffix)
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC−Q101
    Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
   

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Complementary Plastic Power Transistors
Motorola => Freescale
Complementary Silicon Power Plastic Transistors ( Rev : 2013 )
ON Semiconductor
Complementary Silicon Power Plastic Transistors
ON Semiconductor
Complementary Silicon Power Plastic Transistors ( Rev : 2002 )
ON Semiconductor
Complementary Silicon Plastic Power Transistors ( Rev : 2015 )
ON Semiconductor
Complementary Silicon Plastic Power Transistors
ON Semiconductor
Complementary Silicon Plastic Power Transistors
ON Semiconductor
Complementary Silicon Plastic Power Transistors ( Rev : 2014 )
ON Semiconductor
Complementary Silicon Plastic Power Transistors
ON Semiconductor
Complementary Silicon Plastic Power Transistors ( Rev : 2013 )
ON Semiconductor

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