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MJD122 データシート - Inchange Semiconductor

MJD122 image

部品番号
MJD122

コンポーネント説明

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  V2  

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page
2 Pages

File Size
236.6 kB

メーカー
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
· Low Collector-Emitter saturation voltage
· Lead formed for surface mount applications
· High DC current gain
· 100% avalanche tested
· Minimum Lot-to-Lot variations for robust device performance and reliable operation


APPLICATIONS
· Designed for general purpose amplifier and low speed switching applications.


部品番号
コンポーネント説明
PDF
メーカー
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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