MJ4030 データシート - New Jersey Semiconductor
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MJ4030
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New Jersey Semiconductor
MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
...designed for use as output devices in complementary general purpose amplifier applications
FEATURES:
* High Gain Darlington Performance
* DCCurrent Gain hFE = 3500(Typ) @ lc = 10A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
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