MJ21196G データシート - Thinki Semiconductor Co., Ltd.
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MJ21196G
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Thinki Semiconductor Co., Ltd.
250 Watt Silicon Type Metal Package Power Transistor
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
• Total Harmonic Distortion Characterized
• High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second
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40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS ( Rev : 2006 )
ON Semiconductor
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