DESCRIPTION
The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
● Class A operation
● Internally matched to 50 (Ω) system
● High output power
   P1dB=30W (TYP.) @f=2.1~2.3GHz
● High power gain
   GLP=12dB (TYP.) @f=2.1~2.3GHz
● High power added efficiency
   ηadd=45% (TYP.) @f=2.1~2.3GHz
● Loe distortion [item -51]
   IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION
   item 01 : 2.1~2.3GHz band power amplifier
   item 51 : 2.1~2.3GHz band digital radio communication