L,S BAND POWER GaAs FET
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
FEATURES
• High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
• High power gain
Gp=8dB(TYP.) @f=1.65GHz,Pin=26dBm
• High power added efficiency
ηadd =40%(TYP.) @f=1.65GHz,Pin=26dBm
APPLICATION
For UHF Band power amplifiers