MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
FEATUREs
• Composite type with an P-channel silicon MOSFET (MCH3307) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.