MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
FEATUREs
• Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.