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MC74VHC86DR2G(2014) データシート - ON Semiconductor

MC74VHC86 image

部品番号
MC74VHC86DR2G

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ON Semiconductor ONSEMI

The MC74VHC86 is an advanced high speed CMOS 2−input Exclusive−OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems.
   
Features
• High Speed: tPD = 4.8 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 2 μA (Max) at TA = 25°C
• High Noise Immunity: VNIH = VNIL = 28% VCC
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Designed for 2 V to 5.5 V Operating Range
• Low Noise: VOLP = 0.8 V (Max)
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300 mA
• ESD Performance: Human Body Model (HBM) > 2000 V;
    Machine Model > 200 V
• Chip Complexity: 56 FETs or 14 Equivalent Gates
• NLV Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC−Q100
    Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
   

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部品番号
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