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MBRA1H100T3G(2012) データシート - ON Semiconductor

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MBRA1H100T3G

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ON Semiconductor ONSEMI

Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.


FEATUREs
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Low Forward Voltage Drop
• Guardring for Stress Protection
• AEC−Q101 Qualified and PPAP Capable
• NRVBA Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements
• This is a Pb−Free Device*

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds
• Polarity: Cathode Lead Indicated by Polarity Band
• ESD Ratings:
   ✦ Machine Model = C
   ✦ Human Body Model = 3B
• Device Meets MSL 1 Requirements


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