These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

FEATUREs
• Extremely Low vF
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Low Stored Charge, Majority Carrier Conduction
• Pb−Free Packages are Available*