DESCRIPTION
MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. MB82DS01181E is suited for mobile applications such as Cellular Handset and PDA.

FEATURES
• Asynchronous SRAM Interface
• 1 M word × 16-bit Organization
• Low-voltage Operating Conditions : VDD = +1.7 V to +1.95 V
• Wide Operating Temperature : TA = −30 °C to +85 °C
• Read/Write Cycle Time : tRC = tWC = 80 ns Min
• Fast Random Access Time : tAA = tCE = 70 ns Max
• Active current : IDDA1 = 20 mA Max
• Standby current : IDDS1 = 100 µA Max
• Power down current : IDDPS = 10 µA Max
• Byte Control
• Shipping Form : Wafer / Chip