DESCRIPTION
The MB82DP02183F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33, 554, 432 storages accessible in a 16-bit format.
This MB82DP02183F is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan

FEATURES
• Asynchronous SRAM Interface
• Fast Access Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V
• Operating Temperature: TA = 0 °C to + 70 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 30 mA Max
                                             IDDS1 = 120 μA Max
• Various Power Down mode : Sleep
                                                4 M-bit Partial
                                                8 M-bit Partial