Description and Applications
The MADS-002545-1307M Series SurMountä Medium Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

FEATUREs
• Ultra Low Parasitic Capitance and Inductance
• Surface Mountable in Microwave Circuits , No
   Wirebonds Required
• Rugged HMIC Construction with Polyimide
   Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
• Barrier, 100% Stabilization Bake (300 °C, 16 hours)
• Lower Susceptibility to ESD Damage