Description
The MA4SW110, MA4SW210 and MA4SW310 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly.
These switches are fabricated using M/A-COM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies.

FEATUREs
♦ Broad Bandwidth
♦ Specified from 50 MHz to 20 GHz
♦ Usable from 50 MHz to 26.5 GHz
♦ Lower Insertion Loss and Higher Isolation than
   Comparable pHempt Designs
♦ Rugged Fully Monolithic, Glass Encapsulated
   Chip with Polymer Protection Coating
♦ Up to +30dBm C.W. Power Handling @ +25°C