Description
This device is a silicon-glass PIN diode chip fabricated with M/A-COM’s patented HMICÔ process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls conductive. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.

FEATUREs
■ Surface Mount Device
■ No Wirebonds Required
■ Rugged Silicon-Glass Construction
■ Silicon Nitride Passivation
■ Polymer Scratch Protection
■ Low Parasitic Capacitance and Inductance
■ High Power Handling (Efficient Heatsinking)