Description
These silicon - glass PIN diode chips are fabricated with M/A-COM’s patented HMIC™ process. They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges. The large pads allow use of multiple bond wires. The location of these pads on a glass substrate results in low parasitic capacitance. The diode junction is passivated with silicon nitride and a layer of polyimide has been added for scratch protection during assembly. The devices are available on industry standard tape frame for automatic insertion and assembly in high volume applications.

FEATUREs
• Bond Pads Removed From Active Junction
• Large Bond Pads Support Multiple Bond Wires
• Rugged Silicon-Glass Construction
• Silicon Nitride Passivation
• Polyimide Scratch Protection