DESCRIPTION
The M54HC10 is an high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.

■ HIGH SPEED:
   tPD = 8ns (TYP.) at VCC = 6V
■ LOW POWER DISSIPATION:
   ICC = 1µA(MAX.) at TA=25°C
■ HIGH NOISE IMMUNITY:
   VNIH = VNIL = 28% VCC (MIN.)
■ SYMMETRICAL OUTPUT IMPEDANCE:
   |IOH| = IOL = 4mA (MIN)
■ BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL
■ WIDE OPERATING VOLTAGE RANGE:
   VCC (OPR) = 2V to 6V
■ PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 10
■ SPACE GRADE-1: ESA SCC QUALIFIED
■ 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST
■ NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION
■ DEVICE FULLY COMPLIANT WITH SCC-9201-107