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M40SZ100W(2010) データシート - STMicroelectronics

M40SZ100WMQ6F image

部品番号
M40SZ100W

コンポーネント説明

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  2013  

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24 Pages

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379.6 kB

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The M40SZ100Y/W NVRAM controller is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance condition.


FEATUREs
■ Convert low power SRAMs into NVRAMs
■ 5 V or 3 V operating voltage
■ Precision power monitoring and power switching circuitry
■ Automatic write-protection when VCC is out-oftolerance
■ Choice of supply voltages and power-fail deselect voltages:
    – M40SZ100Y: VCC = 4.5 to 5.5 V; 4.20 V ≤ VPFD ≤ 4.50 V (contact local ST sales office for availability)
    – M40SZ100W: VCC = 2.7 to 3.6 V; 2.55 V ≤ VPFD ≤ 2.70 V
■ Reset output (RST) for power on reset
■ 1.25 V reference (for PFI/PFO)
■ Less than 10 ns chip enable access propagation delay (at 5 V)
■ Optional packaging includes a 28-lead SOIC and SNAPHAT® top (to be ordered separately)
■ 28-lead SOIC package provides direct connection for a SNAPHAT top which contains the battery (contact local ST sales office for availability)
■ Battery low pin (BL)
■ RoHS compliant
    – Lead-free second level interconnect

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部品番号
コンポーネント説明
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メーカー
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