SUMMARY DESCRIPTION
The M36W832TE is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– VDDF = 2.7V to 3.3V
– VDDS = VDDQF = 2.7V to 3.3V
– VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 70ns and 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W832TE: 88BAh
– Bottom Device Code, M36W832BE: 88BBh
FLASH MEMORY
■ 32 Mbit (2Mb x16) BOOT BLOCK
– 8 x 4 KWord Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
■ BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
■ SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device identifier
SRAM
■ 8 Mbit (512Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS