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M29W160EB70N3 データシート - Numonyx -> Micron

M29W160ET image

部品番号
M29W160EB70N3

Other PDF
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page
42 Pages

File Size
819.4 kB

メーカー
Numonyx
Numonyx -> Micron Numonyx

SUMMARY DESCRIPTION
   The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.


FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VCC = 2.7V to 3.6V for Program, Erase
      and Read
◾ ACCESS TIMES: 70, 90ns
◾ PROGRAMMING TIME
   – 10µs per Byte/Word typical
◾ 35 MEMORY BLOCKS
   – 1 Boot Block (Top or Bottom Location)
   – 3 Parameter and 31 Main Blocks
◾ PROGRAM/ERASE CONTROLLER
   – Embedded Byte/Word Program
      algorithms
◾ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during
      Erase Suspend
◾ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
◾ TEMPORARY BLOCK UNPROTECTION
   MODE
◾ COMMON FLASH INTERFACE
   – 64 bit Security Code
◾ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
◾ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Top Device Code M29W160ET: 22C4h
   – Bottom Device Code M29W160EB: 2249h
◾ Automotive Grade Parts Available


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