Description
   The M29W128GH and M29W128GL are 128-Mbit (8 Mbit x16 or 16 Mbit x8) non-volatile flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode.

   The memory array is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.