DESCRIPTION
The LX5530 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9 – 5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3 – 5V, with high power gain of up to 33dB. When operated at 5V supply voltage, it provides up to +25dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of 3% for up to +23dBm output power in the 4.9-5.9GHz band.

KEY FEATURES
Broadband 4.9 – 5.9GHz Operation
Advanced InGaP HBT
Single-Polarity 3 – 5V Supply
Power Gain up to ~ 33dB for VC=5V, Icq = 250mA
Power Gain > ~28dB across 4.9- 5.85GHz
OFDM Mask Compliance Power Pout ~ +25dBm over 4.9- 5.85GHz (ACPR ~ -50dBc @ ±30MHz Offset)
Pout up to +23dBm with EVM ~3% (VC = 5V)
EVM < ~2.5% for Pout=+21dBm across 4.9-5.85GHz (VC = 5V)
EVM < ~2.5% for Pout=+19dBm across 4.9-5.85GHz (VC = 4V)
Total Current ~250mA for Pout =+20dBm, Duty Cycle = 99%(VC= 4V)
Complete On-Chip Input Match
Simple Output Match for Optimal Broadband EVM
On-Chip RF Decoupling
Temperature-Compensated On-Chip Output Power Detector with Wide Dynamic Range
Small Footprint: 3x3mm
Low Profile: 0.9mm

APPLICATIONS
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
5GHz Cordless Phone
IEEE 802.16 WiMAX