DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

FEATURES
• Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Input matching cell improves input impedance and allows an easier design of circuits

APPLICATION
• Common emitter class-A linear power amplifiers up to 4.2 GHz.