INTRODUCTION
Sharp’s LH28F400SU-LC 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F400SU-LC is also the ideal choice for designing embedded mass storage flash memory systems.

DESCRIPTION
The LH28F400SU-LC is a high performance 4M (4,194,304 bit) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-LC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5.

FEATURES
• User-Configurable x8 or x16 Operation
• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC)
    – No Requirement for DC/DC Converter to Write/Erase
• 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
• Minimum 2.7 V Read Capability
    – 190 ns Maximum Access Time (VCC = 2.7 V)
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
    – Command User Interface
    – Status Register
    – RY»/BY» Status Output
• System Performance Enhancement
    – Erase Suspend for Read
    – Two-Byte Write
    – Full Chip Erase
• Data Protection - Hardware Erase/Write Lockout during Power Transitions
    – Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 4 µA (Typ.) ICC in CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• Extended Temperature Operation
    – -40°C to +85°C
• State-of-the-Art 0.55 µm ETOX™ Flash Technology
• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package
• 48-Pin 1.2 mm × 12 mm × 18 mm TSOP (Type I) Package
• 44-Pin 600-mil SOP Package