DESCRIPTION
The LH28F160BG-TL/BGH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160BG-TL/BGH-TL can operate at VCC and VPP = 2.7 V.

FEATURES
• Smart 3 technology
    – 2.7 to 3.6 V VCC
    – 2.7 to 3.6 V or 12 V VPP
• High performance read access time LH28F160BG-TL10/BGH-TL10
    – 100 ns (2.7 to 3.6 V) LH28F160BG-TL12/BGH-TL12
    – 120 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
    – Word write suspend to read
    – Block erase suspend to word write
    – Block erase suspend to read
• SRAM-compatible write interface
• Optimized array blocking architecture
    – Two 4 k-word boot blocks
    – Six 4 k-word parameter blocks
    – Thirty-one 32 k-word main blocks
    – Top or bottom boot location
• Enhanced cycling capability
    – 100 000 block erase cycles
• Low power management
    – Deep power-down mode
    – Automatic power saving mode decreases ICC in static mode
• Automated word write and block erase
    – Command user interface
    – Status register
• ETOXTM∗ V nonvolatile flash technology
• Packages
    – 48-pin TSOP Type I (TSOP048-P-1220) Normal bend/Reverse bend
    – 60-ball CSP (FBGA060/048-P-0811)